October 2, 2014

EXPERIENCE Module (MEX)

The MEX is dedicated to the study of radiation effects of space environment on electronic components. The effects targeted are Total Ionising Dose, Single Event Effects and Displacement Damage. Various test vehicles have been chosen upon a list of very sensitive devices identified when performing ground testing (Memories, linear and optoelectronics devices, power MOSFETs,...).

The MEX is made of an analogue part and a logic one managed through a FPGA and its buffer memory. The analogue part is made of measurement circuits connected to the FPGA via ADCs and DACs. It controls the dosimetry and TID sections and part of the SEE section.

The logic part is made of two blocks dedicated to SEU detection. Figure below shows the MEX engineering model and its packaging. The MEX is located at the bottom of ICARE-NG instrument. Its packaging is used to fix the complete ICARE-NG instrument on the wall of the satellites (internal side). By this way, the MEX test board is the most exposed to radiation coming from the outside of the satellite.

The MEX engineering model board, package and location at the bottom of the ICARE-NG instrument
The MEX engineering model board, package and location at the bottom of the ICARE-NG instrument

The EXPERIENCE Module can be changed easily from one mission to another. The EXPERIENCE Module can be switched off independently from the ICARE-NG SPECTROMETER unit.

Dosimetry

This part of the MEX measures precisely the ionising dose constraint encountered by CARMEN experiments. It uses two RADFET dosimeters from CNRS-LAAS associated to an OSL (Optically Stimulated Luminescence) dosimeter developed by CEM2 laboratory at University of Montpellier II. Both are placed in the same area in order to procure comparable data set.

Dosimetre RADFET du LAAS/CNRS
RADFET dosimeter from LAAS/CNRS
 Dosimetre OSL du CEM2
OSL dosimeter from CEM2

DUT

DUT ReferenceFunctionNumber of
DUT/MEX
Tested SEE
HITACHI HM628512CSRAM 512k*82SEU
SAMSUNG KM6840000ASRAM 512k*82SEU
3D+ MMSR32001608S-CSRAM 2M*161SEU
SAMSUNG K7A81800M 6SSRAM 512k*161SEU
IDT IDT71V3558S133PSISSRAM 512k*161SEU
INFINEON HYB39S512800ATSDRAM 64M*82SEU
MICRON MTL48LC64M8A2SDRAM 64M*82SEU
3D+ MMSD08512408S-Y SDRAM512M*82SEU
SAMSUNG K4S560432C SDRAM64M*42SEU
SAMSUNG KM44V16004BDDRAM 16M*42SEU
CYPRESS CY7C1069 SRAM2M*81SEL
INTERNATIONAL RECTIFIER IRF360 400VNchannel power MOSFET4SEB
NATIONAL SEMICONDUCTORS LM324Op amp1SET
NATIONAL SEMICONDUCTORS LM139Voltage comparator1SET
ANALOG DEVICES OP470Op amp1SET + SEDR

Special thanks to D. Peyre, C. Binois and R. Mangeret from EADS-ASTRIUM, M. Melotte, P. Calvel and R. Marec from THALES ALENIA SPACE, T. Dargnies from 3D-Plus, G. Sarrabayrousse from CNRS-LAAS, J.-R. Vaille, P. Garcia and L. Dusseau from Université de Montpellier II, N. Poiraudeau from EREMS and finally F. Malou and J. Bertrand from CNES for their participation in this project.

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