EXPERIENCE Module (MEX)
The MEX is dedicated to the study of radiation effects of space environment on electronic components. The effects targeted are Total Ionising Dose, Single Event Effects and Displacement Damage. Various test vehicles have been chosen upon a list of very sensitive devices identified when performing ground testing (Memories, linear and optoelectronics devices, power MOSFETs,...).
The MEX is made of an analogue part and a logic one managed through a FPGA and its buffer memory. The analogue part is made of measurement circuits connected to the FPGA via ADCs and DACs. It controls the dosimetry and TID sections and part of the SEE section.
The logic part is made of two blocks dedicated to SEU detection. Figure below shows the MEX engineering model and its packaging. The MEX is located at the bottom of ICARE-NG instrument. Its packaging is used to fix the complete ICARE-NG instrument on the wall of the satellites (internal side). By this way, the MEX test board is the most exposed to radiation coming from the outside of the satellite.
The MEX engineering model board, package and location at the bottom of the ICARE-NG instrument
The EXPERIENCE Module can be changed easily from one mission to another. The EXPERIENCE Module can be switched off independently from the ICARE-NG SPECTROMETER unit.
Dosimetry
This part of the MEX measures precisely the ionising dose constraint encountered by CARMEN experiments. It uses two RADFET dosimeters from CNRS-LAAS associated to an OSL (Optically Stimulated Luminescence) dosimeter developed by CEM2 laboratory at University of Montpellier II. Both are placed in the same area in order to procure comparable data set.
 RADFET dosimeter from LAAS/CNRS |  OSL dosimeter from CEM2 |
DUT
| DUT Reference | Function | Number of DUT/MEX | Tested SEE |
| HITACHI HM628512C | SRAM 512k*8 | 2 | SEU |
| SAMSUNG KM6840000A | SRAM 512k*8 | 2 | SEU |
| 3D+ MMSR32001608S-C | SRAM 2M*16 | 1 | SEU |
| SAMSUNG K7A81800M 6 | SSRAM 512k*16 | 1 | SEU |
| IDT IDT71V3558S133PSI | SSRAM 512k*16 | 1 | SEU |
| INFINEON HYB39S512800AT | SDRAM 64M*8 | 2 | SEU |
| MICRON MTL48LC64M8A2 | SDRAM 64M*8 | 2 | SEU |
| 3D+ MMSD08512408S-Y SDRAM | 512M*8 | 2 | SEU |
| SAMSUNG K4S560432C SDRAM | 64M*4 | 2 | SEU |
| SAMSUNG KM44V16004B | DDRAM 16M*4 | 2 | SEU |
| CYPRESS CY7C1069 SRAM | 2M*8 | 1 | SEL |
| INTERNATIONAL RECTIFIER IRF360 400V | Nchannel power MOSFET | 4 | SEB |
| NATIONAL SEMICONDUCTORS LM324 | Op amp | 1 | SET |
| NATIONAL SEMICONDUCTORS LM139 | Voltage comparator | 1 | SET |
| ANALOG DEVICES OP470 | Op amp | 1 | SET + SEDR |
Special thanks to D. Peyre, C. Binois and R. Mangeret from EADS-ASTRIUM, M. Melotte, P. Calvel and R. Marec from THALES ALENIA SPACE, T. Dargnies from 3D-Plus, G. Sarrabayrousse from CNRS-LAAS, J.-R. Vaille, P. Garcia and L. Dusseau from Université de Montpellier II, N. Poiraudeau from EREMS and finally F. Malou and J. Bertrand from CNES for their participation in this project.